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AON6884 - N-Channel MOSFET

Description

The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This is an all purpose device that is suitable for use in a wide range of power conversion applications.

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Full PDF Text Transcription

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AON6884 40V Dual N-Channel MOSFET General Description Product Summary The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 40V 34A < 11.3mW < 13.8mW DFN5X6 EP2 Top View SS1 1 GS1 2 SS2 3 GG2 4 8 D1 7 D1 6 D2 5 D2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.
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