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AON6816 - 30V Dual N-Channel MOSFET

Description

Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Application DC/DC Converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at V

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Full PDF Text Transcription

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AON6816 30V Dual N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application • DC/DC Converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 16A < 6.2mΩ < 9.6mΩ HBM Class 2 DFN5X6 EP2 Top View S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Continuous Drain TA=25°CG Current TA=70°C Avalanche Current C Avalanche energy L=0.
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