Datasheet Details
| Part number | AON6812 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 325.77 KB |
| Description | 30V Common Drain N-Channel MOSFET |
| Download | AON6812 Download (PDF) |
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Overview: AON6812 AlphaMOS 30V Common Drain N-Channel General.
| Part number | AON6812 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 325.77 KB |
| Description | 30V Common Drain N-Channel MOSFET |
| Download | AON6812 Download (PDF) |
|
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain Application • Battery Management Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 28A < 4mΩ < 6mΩ HBM Class 3A Top View DFN5X6B Bottom View G2 S2 S2 S2 D1/D2 PIN1 G1 S1 S1 S1 PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG D1 G1 G2 S1 Maximum 30 ±20 28 22 112 27 21 40 40 36 31 12.5 4.1 2.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 24 53 3 Max 30 64 4 D2 S2 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.2.0: January 2016 www.aosmd.com Page 1 of 6 AON6812 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±16V ±10 µA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 3.3 4 mΩ 4.5 5.4 VGS=4.5V, ID=20A 4.8 6 mΩ gFS Forward Transconductance VDS=5V, ID=20A 83 S VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Dio
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