Datasheet Details
| Part number | AON6884 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 455.57 KB |
| Description | N-Channel MOSFET |
| Download | AON6884 Download (PDF) |
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| Part number | AON6884 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 455.57 KB |
| Description | N-Channel MOSFET |
| Download | AON6884 Download (PDF) |
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Product Summary The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This is an all purpose device that is suitable for use in a wide range of power conversion applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 40V 34A < 11.3mW < 13.8mW DFN5X6 EP2 Top View SS1 1 GS1 2 SS2 3 GG2 4 8 D1 7 D1 6 D2 5 D2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 34 21 120 9 7 35 61 21 8 1.6 1 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 35 65 Maximum Junction-to-Case Steady-State RqJC 5 Max 45 80 6 D1 D2 G2 S1 S2 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.1: September 2023 www.aosmd.com Page 1 of 6 AON6884 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.55 2.1 2.7 V ID(ON) On state drain current VGS=10V, VDS=5V 120 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A TJ=125°C 9.4 11.3 14 17 mW VGS=4.5V, ID=10A 11 13.8 mW gFS Forward Transconductance VDS=5V, ID=10A 50 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7
AON6884 40V Dual N-Channel MOSFET General.
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