Datasheet Details
| Part number | AON7448 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 328.88 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet | AON7448_AlphaOmegaSemiconductors.pdf |
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Overview: www.DataSheet.co.kr AON7448 80V N-Channel MOSFET SDMOS TM General.
| Part number | AON7448 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 328.88 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet | AON7448_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON7448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 8V) 80V 24A < 30mΩ < 37mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom 1 2 3 4 Top View 8 7 6 5 D G Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG S Maximum 80 ±25 24 15 76 7.1 5.7 25 31 36 15 3.1 2 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 2.8 Max 40 75 3.4 Units ° C/W ° C/W ° C/W Rev 1: April 2011 www.aosmd.com Page 1 of 7 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7448 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=80V, VGS=0V TJ=55° C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=8V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, ID=10A IS=1A,VGS=0V G Min 80 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On st
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