Datasheet Details
| Part number | AONS36312 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 469.41 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS36312-AlphaOmegaSemiconductors.pdf |
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Overview: AONS36312 30V N-Channel MOSFET General.
| Part number | AONS36312 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 469.41 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AONS36312-AlphaOmegaSemiconductors.pdf |
|
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 85A < 2.1mΩ < 2.6mΩ Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS36312 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 85 75 340 42.5 34 80 32 48 19 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 2.1 Max 20 50 2.6 Units °C/W °C/W °C/W Rev.1.0: May 2019 www.aosmd.com Page 1 of 6 AONS36312 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximu
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