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AOP804 - Dual N-Channel MOSFET

Description

The AOP804 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AOP804 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 60V ID = 4.7A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 D2 PDIP-8 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 60 ±20 4.7 3.8 20 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature.

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www.DataSheet4U.com AOP804 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AOP804 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP804 is Pb-free (meets ROHS & Sony 259 specifications). AOP804L is a Green Product ordering option. AOP804 and AOP804L are electrically identical. Features VDS (V) = 60V ID = 4.7A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.
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