Datasheet4U Logo Datasheet4U.com

AOP806 - Dual N-Channel MOSFET

General Description

The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AOP806 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 75V ID = 3.4A (VGS = 10V) RDS(ON) < 132mΩ (VGS = 10V) RDS(ON) < 168mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 PDIP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current B B Symbol VDS VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG Maximum 10 Sec Steady Sta.

📥 Download Datasheet

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AOP800 Dual N-Channel MOSFET
AOP802 Dual N-Channel MOSFET
AOP804 Dual N-Channel MOSFET
AOP600 MOSFET
AOP601 MOSFET
AOP605 MOSFET
AOP605L MOSFET
AOP606 MOSFET
AOP607 MOSFET
AOP608 MOSFET

Full PDF Text Transcription for AOP806 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOP806. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
www.DataSheet4U.com AOP806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP806 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V ID = 3.4A (VGS = 10V) RDS(ON) < 132mΩ (VGS = 10V) RDS(ON) < 168mΩ (VGS = 4.