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AOP605L - MOSFET

Download the AOP605L datasheet PDF. This datasheet also covers the AOP605 variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AOP605 and AOP605L are electrically identical.

Key Features

  • n-channel VDS (V) = 30V ID = 7.5A (VGS = 10V) p-channel -30V -6.6A (VGS = -10V) RDS(ON) < 28mΩ (VGS = 10V) < 35mΩ (VGS = -10V) < 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.5V) PDIP8 Top View Bottom View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 PDIP-8 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 7.5 Current A TA=70°C ID.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AOP605_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOP605 MOSFET
AOP600 MOSFET
AOP601 MOSFET
AOP606 MOSFET
AOP607 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOP605 Complementary Enhancement Mode Field Effect Transistor General Description The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is Halogen Free Features n-channel VDS (V) = 30V ID = 7.5A (VGS = 10V) p-channel -30V -6.6A (VGS = -10V) RDS(ON) < 28mΩ (VGS = 10V) < 35mΩ (VGS = -10V) < 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.