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AOP606 - MOSFET

General Description

The AOP606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in inverter and other PWM applications.

Standard Product AOP606 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel p-channel -60V VDS (V) = 60V ID = 7.9A (VGS=10V) -6.1A RDS(ON) RDS(ON) < 25m Ω (VGS=10V) < 42mΩ (VGS = -10V) < 30m Ω (VGS=4.5V) < 52mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 ±20 -6.1 -4.9 -30 3.1 2 -5.

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www.DataSheet4U.com AOP606 Complementary Enhancement Mode Field Effect Transistor General Description The AOP606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other PWM applications. Standard Product AOP606 is Pb-free (meets ROHS & Sony 259 specifications). AOP606L is a Green Product ordering option. AOP606 and AOP606L are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 7.9A (VGS=10V) -6.1A RDS(ON) RDS(ON) < 25m Ω (VGS=10V) < 42mΩ (VGS = -10V) < 30m Ω (VGS=4.5V) < 52mΩ (VGS = -4.