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AOP601 - MOSFET

General Description

The AOP601 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

A Schottky diode in parallel with the n-channel FET reduces body diode related losses.

Key Features

  • n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF.

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www.DataSheet4U.com AOP601 Complementary Enhancement Mode Field Effect Transistor General Description The AOP601 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Standard Product AOP601 is Pb-free (meets ROHS & Sony 259 specifications). AOP601L is a Green Product ordering option. AOP601 and AOP601L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.