Datasheet Details
| Part number | AOT2144L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.17 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOT2144L-AlphaOmegaSemiconductors.pdf |
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Overview: AOT2144L/AOB2144L 40V N-Channel MOSFET General.
| Part number | AOT2144L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 299.17 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOT2144L-AlphaOmegaSemiconductors.pdf |
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|
|
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Opitimized Ruggedness • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 120 A < 2.3mΩ < 4mΩ Applications • DC Motor Driver • Synchronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested TO220 TO-263 Top View Bottom View Top View D2PAK Bottom View D D D D D S GD AOT2144L Orderable Part Number AOT2144L AOB2144L SDG Package Type TO-220 TO-263 S G AOB2144L Form Tube Tape & Reel G G S S Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=25°C ID TC=100°C Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 120 G 205 I 120 G 772 44 35 47 331 187 93 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 12 50 Maximum Junction-to-Case Steady-State RqJC 0.6 Max 15 60 0.8 Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 6 AOT2144L/AOB2144L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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