Datasheet Details
| Part number | AOT462L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 328.84 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOT462L Download (PDF) |
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| Part number | AOT462L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 328.84 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOT462L Download (PDF) |
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|
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The AOT462L/AOB462L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 60V 35A < 18mΩ Top View TO220 Bottom View D D Top View D TO-263 D2PAK Bottom View D AOT462L S GD SD G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G AOB462L Maximum 60 ±20 35 27 120 7 6 26 101 100 50 2.1 1.3 -55 to 175 G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State Symbol RθJA RθJC Typ 45 1.25 Max 60 1.5 D G S Units V V A A A mJ W W °C Units °C/W °C/W Rev.2.0: August 2013 www.aosmd.com Page 1 of 6 AOT462L/AOB462L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2 3.1 4 V ID(ON) On state drain current VGS=10V, VDS=5V 120 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A TO220 VGS=10V, ID=30A TO263 TJ=125°C TJ=125°C 14.5 18 mΩ 25 30 14.2 17.7 mΩ 24.5 30 gFS Forward Transconductance VDS=5V, ID=30A 50 S VSD
AOT462L/AOB462L 60V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOT462L | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOT462 | N-Channel MOSFET |
| AOT460 | N-Channel MOSFET |
| AOT466L | 60V N-Channel MOSFET |
| AOT400 | N-Channel MOSFET |
| AOT402 | N-Channel MOSFET |
| AOT404 | N-Channel MOSFET |
| AOT410L | 100V N-Channel MOSFET |
| AOT412 | N-Channel Power Transistor |
| AOT414 | 100V N-channel MOSFET |
| AOT418L | N-Channel MOSFET |