Datasheet Details
| Part number | AOT472 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 173.08 KB |
| Description | 75V N-Channel MOSFET |
| Download | AOT472 Download (PDF) |
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Download the AOT472 datasheet PDF. This datasheet also includes the AOTF472 variant, as both parts are published together in a single manufacturer document.
| Part number | AOT472 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 173.08 KB |
| Description | 75V N-Channel MOSFET |
| Download | AOT472 Download (PDF) |
|
|
|
Product Summary The AOT472 and AOTF472 use a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control.
With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.
VDS ID (TO220 at VGS=10V) ID (TO220FL at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 75V 140A 53A < 8.9mΩ TO-220 Top View TO-220FL D G D S AOT472 G D S AOTF472 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT472 AOTF472 Drain-Source Voltage VDS 75 Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C VGS ±20 140G 53 ID 101 37.5 IDM 340 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS,IAR EAS,EAR 10 10 8 8 125 781 TC=25°C Power Dissipation B TC=100°C PD 417 57.5 208 29 TA=25°C Power Dissipation A TA=70°C 1.9 1.9 PDSM 1.2 1.2 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC AOT472 13.9 65 0.36 AOTF472 13.9 65 2.6 Rev 4: March 2009 www.aosmd.com Units V V A A A mJ W W °C Units °C/W °C/W °C/W Page 1 of 7 AOT472/AOTF472 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 75 V IDSS Zero Gate Voltage Drain Current VDS=75V, VGS=0V TJ=55°C 1 μA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250μA 2.5 3.3 3.9 V ID(ON) On state drain current VGS=10V, VDS=5V 340 A RDS(ON) Static Drain-Source On-Resistance
AOT472/AOTF472 75V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOT472 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
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| AOT474 | N-Channel MOSFET |
| AOT400 | N-Channel MOSFET |
| AOT402 | N-Channel MOSFET |
| AOT404 | N-Channel MOSFET |
| AOT410L | 100V N-Channel MOSFET |
| AOT412 | N-Channel Power Transistor |
| AOT414 | 100V N-channel MOSFET |
| AOT418L | N-Channel MOSFET |
| AOT424 | N-Channel MOSFET |