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Alpha & Omega Semiconductors

AOT9N40 Datasheet Preview

AOT9N40 Datasheet

N-Channel MOSFET

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AOT9N40
400V,8A N-Channel MOSFET
General Description
Product Summary
The AOT9N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT9N40L
Top View
TO-220
500V@150
8A
< 0.8
D
DS
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol
RθJA
RθCS
RθJC
G
AOT9N40
400
±30
8
5
22
3.2
150
300
5
132
1
-55 to 150
300
AOT9N40
65
0.5
0.95
Rev 0: Dec 2010
www.aosmd.com
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 5




Alpha & Omega Semiconductors

AOT9N40 Datasheet Preview

AOT9N40 Datasheet

N-Channel MOSFET

No Preview Available !

AOT9N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
400
500
0.4
V
V/ oC
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
Static Drain-Source On-Resistance
VGS=10V, ID=4A
Forward Transconductance
VDS=40V, ID=4A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.4
4
4.5
V
0.64 0.8
8
S
0.75 1
V
8
A
22
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=320V, ID=8A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
tf
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=200V, ID=8A,
RG=25
trr
Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
500 630 760 pF
45
73 100 pF
2
5.7
9
pF
1.2 2.6 4.0
10 13.1 16 nC
3.9
nC
4.8
nC
17
ns
52
ns
25
ns
30
ns
150 195 240 ns
1.5 1.9 2.3 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.2A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Dec 2010
www.aosmd.com
Page 2 of 5


Part Number AOT9N40
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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