AOT9N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
400
500
0.4
V
V/ oC
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V ID=250µA
Static Drain-Source On-Resistance
VGS=10V, ID=4A
Forward Transconductance
VDS=40V, ID=4A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.4
4
4.5
V
0.64 0.8
Ω
8
S
0.75 1
V
8
A
22
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=320V, ID=8A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
tf
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=200V, ID=8A,
RG=25Ω
trr
Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
500 630 760 pF
45
73 100 pF
2
5.7
9
pF
1.2 2.6 4.0
Ω
10 13.1 16 nC
3.9
nC
4.8
nC
17
ns
52
ns
25
ns
30
ns
150 195 240 ns
1.5 1.9 2.3 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Dec 2010
www.aosmd.com
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