Description
The AOT5N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Features
- VDS (V) = 700V @ 150°C ID = 5A RDS(ON) < 1.8 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
Top View
TO-220
D
G G D S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain B Current Pulsed Drain Current Avalanche Current
C C G C
Units V V A A mJ mJ V/ns W W/ C °C °C
o
TC=25°C TC=100°C ID IDM IAR EAR EAS dV/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 54.
AOT9604 Datasheet
