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AOT9610 - 12A N-Channel MOSFET

General Description

The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Key Features

  • VDS (V) = 700V @ 150°C ID = 12A RDS(ON) < 0.55 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT12N60 Parameter Symbol AOTF12N60 VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B Power Dissipa.

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOT9600 600V N-Channel MOSFET
AOT9602 600V N-Channel MOSFET
AOT9604 5A N-Channel MOSFET
AOT9606 8A N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.datasheet4u.com AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 12A RDS(ON) < 0.