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AOT9602 - 600V N-Channel MOSFET

General Description

The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Key Features

  • VDS (V) = 700V @ 150°C ID = 2.5A RDS(ON) < 3.5 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss, C oss , C rss Tested! Top View D TO-220 G G S D S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain TC=25°C 2.5 B Current TC=100°C ID 1.6 Pulsed Drain Current Avalanche Current C C C Units V V A A mJ mJ V/ns W W/ C °C °C o IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typic.

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Other Datasheets by Alpha & Omega Semiconductors

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AOT9600 600V N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.datasheet4u.com AOT3N60 2.5A, 600V N-Channel MOSFET formerly engineering part number AOT9602 General Description The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 2.5A RDS(ON) < 3.5 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss, C oss , C rss Tested! Top View D TO-220 G G S D S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain TC=25°C 2.