Description
The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Features
- VDS (V) = 700V @ 150°C ID = 1.3A RDS(ON) < 9Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
D
G
G D S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current C Avalanche Current
C C G
Maximum 600 ±30 1.3 0.8 4 1.0 15 30 5 41.7 0.33 -50 to 150 300
Units V V A A mJ mJ V/ns W W/ oC °C °C
TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symb.
AOT9600 Datasheet
