Datasheet4U Logo Datasheet4U.com

AOT9608 - 10A N-Channel MOSFET

General Description

The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Key Features

  • VDS (V) = 700V @ 150°C ID = 10A RDS(ON) < 0.75 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT10N60 Parameter Symbol AOTF10N60 VDS Drain-Source Voltage 600 VGS ±30 Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOT9N40 N-Channel MOSFET INCHANGE
AOT9N50 N-Channel MOSFET INCHANGE
AOT9N70 N-Channel MOSFET INCHANGE
AOT101 AOT101 ETC
AOT10N60 N-Channel MOSFET INCHANGE

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOT9600 600V N-Channel MOSFET
AOT9602 600V N-Channel MOSFET
AOT9604 5A N-Channel MOSFET
AOT9606 8A N-Channel MOSFET
AOT9610 12A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.datasheet4u.com AOT10N60 / AOTF10N60 600V, 10A N-Channel MOSFET formerly engineering part number AOT9608/AOTF9608 General Description The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 10A RDS(ON) < 0.