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AOTF14N50FD Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Product Summary The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

For Halogen Free add "L" suffix to part number: AOT14N50FDL & AOTF14N50FDL VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 14A < 0.47Ω D AOT14N50FD DS G AOTF14N50FD S GD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT14N50FD AOTF14N50FD Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 14 14* 9.6 9.6* 56 5 375 750 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT14N50FD 65 0.5 AOTF14N50FD 65 -- Maximum Junction-to-Case RθJC 0.45 2.5 * Drain current limited by maximum junction temperature.

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