Datasheet Details
| Part number | AOTF2144L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 357.71 KB |
| Description | 40V N-Channel MOSFET |
| Download | AOTF2144L Download (PDF) |
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| Part number | AOTF2144L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 357.71 KB |
| Description | 40V N-Channel MOSFET |
| Download | AOTF2144L Download (PDF) |
|
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Opitimized Ruggedness • RoHS and Halogen-Free Compliant Applications • DC Motor Driver • Synchronous Rectification in DC/DC and AC/DC Converters Top View TO220F Bottom View Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 90A < 2.3mΩ < 4mΩ D G DS S DG Orderable Part Number AOTF2144L Package Type TO-220F G S Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 90 57 360 46 37 47 331 32 12.5 8.3 5.3 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 10 45 Maximum Junction-to-Case Steady-State RqJC 3.2 Max 15 55 3.9 Units °C/W °C/W °C/W Rev 1.1: May 2024 www.aosmd.com Page 1 of 6 AOTF2144L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss
AOTF2144L 40V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF2144L | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOTF2142L | N-Channel MOSFET |
| AOTF2146L | 40V N-Channel MOSFET |
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| AOTF20N40 | 20A N-Channel MOSFET |
| AOTF20N40L | 20A N-Channel MOSFET |
| AOTF20N60 | 20A N-Channel MOSFET |
| AOTF20S60 | Power Transistor |
| AOTF20S60L | Power Transistor |
| AOTF2210L | N-Channel MOSFET |
| AOTF22N50 | 22A N-Channel MOSFET |