Datasheet Details
| Part number | AOTF22N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 457.22 KB |
| Description | 22A N-Channel MOSFET |
| Download | AOTF22N50 Download (PDF) |
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Download the AOTF22N50 datasheet PDF. This datasheet also includes the AOT22N50 variant, as both parts are published together in a single manufacturer document.
| Part number | AOTF22N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 457.22 KB |
| Description | 22A N-Channel MOSFET |
| Download | AOTF22N50 Download (PDF) |
|
|
|
Product Summary The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOT22N50L&AOTF22N50L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 22A < 0.26W D AOT22N50 S D G AOTF22N50 S D G G S Orderable Part Number AOT22N50L AOTF22N50 AOTF22N50L Package Type TO220 Green TO-220F Pb Free TO-220F Green Form Tube Tube Tube Minimum Order Quantity 1000 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT22N50 Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt 22 ID 15 IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT22N50 65 0.5 Maximum Junction-to-Case RqJC 0.3 * Drain current limited by maximum junction temperature.
AOTF22N50 AOTF22N50L 500 ±30 22* 22* 15* 15* 88 7 735 1470 5 50 39 0.4 0.3 -55 to 150 300 AOTF22N50 AOTF22N50L 65 65 -- -- 2.5 3.2 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.2.1: May 2024 www.aosmd.com Page 1 of 6 AOT22N50/AOTF22N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Ty
AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOTF22N50 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOTF2210L | N-Channel MOSFET |
| AOTF20C60 | N-Channel MOSFET |
| AOTF20N40 | 20A N-Channel MOSFET |
| AOTF20N40L | 20A N-Channel MOSFET |
| AOTF20N60 | 20A N-Channel MOSFET |
| AOTF20S60 | Power Transistor |
| AOTF20S60L | Power Transistor |
| AOTF2142L | N-Channel MOSFET |
| AOTF2144L | 40V N-Channel MOSFET |
| AOTF2146L | 40V N-Channel MOSFET |