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AOTF240L Datasheet 40V N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Download the AOTF240L datasheet PDF. This datasheet also includes the AOT240L variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AOT240L_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

Product Summary The AOT240L & AOB240L & AOTF240L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 40V 105A/85A < 2.9mΩ (< 2.6mΩ∗) < 3.7mΩ (< 3.5mΩ∗) D AOT240L DS G Orderable Part Number AOT240L AOB240L AOTF240L AOTF240L S GD Package Type TO-220 TO-263 TO-220F AOB240L Form Tube Tape & Reel Tube S G G S Minimum Order Quantity 1000 800 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT240L/AOB240L AOTF240L Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM 105 82 400 85 60 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS 20 16 68 231 TC=25°C Power Dissipation B TC=100°C PD 176 88 41 20 TA=25°C Power Dissipation A TA=70°C PDSM 1.9 1.2 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC AOT240L/AOB240L 15 65 0.85 AOTF240L 15 65 3.6 Units °C/W °C/W °C/W Rev.3.0: November 2013 www.aosmd.com Page 1 of 7 AOT240L/AOB240L/AOTF240L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance ID=

Overview

AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General.