Datasheet Details
| Part number | AOTF286L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 242.46 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
 AOTF286L Datasheet
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| Part number | AOTF286L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 242.46 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
AOTF286L Datasheet
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO220F Bottom View 80V 56A < 6mΩ < 8mΩ D G DS S DG Orderable Part Number AOTF286L Package Type TO-220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 10 45 Maximum Junction-to-Case Steady-State RθJC 3.3 G Form Tube S Minimum Order Quantity 1000 Maximum 80 ±20 56 39 225 13.5 10.5 50 125 96 37.5 18.5 2.2 1.4 -55 to 175 Units V V A A A mJ V W W °C Max 15 55 4.0 Units °C/W °C/W °C/W Rev.1.0: January 2015 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ci
AOTF286L 80V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF286L | N-Channel MOSFET | INCHANGE |
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