Datasheet Details
| Part number | AOTF296L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 240.48 KB |
| Description | 100V N-Channel MOSFET |
| Download | AOTF296L Download (PDF) |
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| Part number | AOTF296L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 240.48 KB |
| Description | 100V N-Channel MOSFET |
| Download | AOTF296L Download (PDF) |
|
|
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO220F Bottom View 100V 41A < 10mΩ < 12.5mΩ D G DS S DG Orderable Part Number AOTF296L Package Type TO-220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 10 45 Maximum Junction-to-Case Steady-State RθJC 3.4 G Form Tube S Minimum Order Quantity 1000 Maximum 100 ±20 41 29 160 10 8 40 80 120 36.5 18 2.2 1.4 -55 to 175 Units V V A A A mJ V W W °C Max 15 55 4.1 Units °C/W °C/W °C/W Rev.1.0: March 2015 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A Forward Transconductance Diode Forward Voltage VGS=6V, ID=20A VDS=5V, ID=20A IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss
AOTF296L 100V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF296L | N-Channel MOSFET | INCHANGE |
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