Electrical Characteristics (TJ=25°C unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Continuous Current G
Reverse Transfer Capacitance
VGS=0V, VDS=20V, f=1MHz
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=20A
Gate Drain Charge
Turn-On Rise Time
VGS=10V, VDS=20V, RL=1.0Ω,
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=400A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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Rev.1.0: December 2017
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