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Alpha & Omega Semiconductors

AOW66412 Datasheet Preview

AOW66412 Datasheet

N-Channel MOSFET

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AOW66412
40V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Applications
• Synchronous Rectification in DC/DC and
AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
Top View
TO-262
Bottom View
100% UIS Tested
100% Rg Tested
40V
120A
< 1.9mΩ
< 2.5mΩ
D
Orderable Part Number
AOW66412
G DS
G
SD
Package Type
TO-262
Form
Tube
G
S
Minimum Order Quantity
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.3mH C
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
120
120
600
45
36
60
540
260
104
6.2
4.0
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
15
55
Maximum Junction-to-Case
Steady-State
RθJC
0.4
Max
20
65
0.48
Units
°C/W
°C/W
°C/W
Rev.1.0: December 2017
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOW66412 Datasheet Preview

AOW66412 Datasheet

N-Channel MOSFET

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AOW66412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
IDSS
Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
f=1MHz
0.5
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Qoss
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=20V, ID=20A
Gate Drain Charge
Output Charge
Turn-On DelayTime
VGS=0V, VDS=20V
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=400A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs
Typ
1.8
1.55
2.25
1.95
100
0.66
8320
1438
85
1.15
100
45
25
7
56
19
7
69
10
26
83
Max Units
V
1
µA
5
±100 nA
2.3
V
1.9
mΩ
2.8
2.5 mΩ
S
1
V
120
A
pF
pF
pF
1.8
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: December 2017
www.aosmd.com
Page 2 of 6


Part Number AOW66412
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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