AFM04P3-000 mesfet equivalent, power gaas mesfet.
s 21 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC
–26 GHz s 0.25 µm Ti/Pd/A.
in oscillator and amplifier circuits. The device employs Ti/Pd/Au gate metallization and surface passivation to ensure a.
The AFM04P3-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 400 µm. The device has excellent gain and power performance through 26 GHz, making it suitable for a wide range of commercial a.
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