power gaas mesfet.
s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC
–40 GHz s 0.25 µm Ti/Pd.
in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged,.
The AFM06P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 600 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial a.
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