AFP02N8-213 chips equivalent, general purpose packaged phemt chips.
s Low Noise Figure, 1.55 dB @ 4 GHz s High Associated Gain, 13 dB @ 4 GHz s High MAG, > 15 dB @ 4 GHz s 0.7 µm Ti/Pd/Au Gates s Passivated Surface s Low Cost Metal Cerami.
The devices employ 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Available in metal .
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