Datasheet Summary
Power LDMOS transistor
Rev. 3
- 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
1300 32 55
18.0 32
- 31 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
1.2 Features and benefits
- Excellent ruggedness
- High...