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Ampleon

BLF8G22LS-160BV Datasheet Preview

BLF8G22LS-160BV Datasheet

Power LDMOS transistor

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BLF8G22LS-160BV
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170
1300 32 55
18.0 32 31 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range




Ampleon

BLF8G22LS-160BV Datasheet Preview

BLF8G22LS-160BV Datasheet

Power LDMOS transistor

No Preview Available !

BLF8G22LS-160BV
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4,5
6
7
Pinning
Description
drain
gate
source
video decoupling
sense gate
sense drain
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
1, 4, 5 7
4
5
[1]
3
2
6
6
7
2
3
aaa-004156
Table 3. Ordering information
Type number
Package
Name Description
BLF8G22LS-160BV -
earless flanged LDMOST ceramic package; 6 leads
Version
SOT1120B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage
VGS
gate-source voltage
VGS(sense)
Tstg
Tj
Tcase
sense gate-source voltage
storage temperature
junction temperature
case temperature
[1] Continuous use at maximum temperature will affect MTTF.
Min
-
0.5
0.5
65
-
[1] -
Max
65
+13
+9
+150
200
150
Unit
V
V
V
C
C
C
5. Recommended operating conditions
Table 5.
Symbol
Tcase
Operating conditions
Parameter
case temperature
6. Thermal characteristics
Conditions
Min Typ Max Unit
40 - +125 C
BLF8G22LS-160BV#3
Product data sheet
Table 6.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
Tcase = 80 C; PL = 55 W
Typ Unit
0.27 K/W
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 13


Part Number BLF8G22LS-160BV
Description Power LDMOS transistor
Maker Ampleon
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