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BLF8G22LS-160BV Power LDMOS transistor

BLF8G22LS-160BV Description

BLF8G22LS-160BV Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.

BLF8G22LS-160BV Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (100 MHz typical)

BLF8G22LS-160BV Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1300 32 55 18.0 32

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Datasheet Details

Part number
BLF8G22LS-160BV
Manufacturer
Ampleon
File Size
1.04 MB
Datasheet
BLF8G22LS-160BV-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
Ampleon BLF8G22LS-160BV-like datasheet