Dual Pin Electronic
1000 MHz Toggle Rate
Driver/Comparator/Active Load and Dynamic Clamp
Inhibit Mode Function
100-Lead LQFP Package with Built-In Heat Sink
48 ⍀ Output Resistance
800 ps Tr/Tf for a 3 V Step
1.1 ns Propagation Delay at 3 V
؎40 mA Voltage Programmable Current Range
50 ns Settling Time to 15 mV
Automatic Test Equipment
Semiconductor Test Systems
Board Test Systems
Instrumentation and Characterization Equipment
The AD53522 is a complete, high speed, single-chip solution
that performs the pin electronics functions of driver, comparator,
and active load (DCL) for ATE applications. In addition, the
driver contains a dynamic clamp function and the active load
contains an integrated Schottky diode bridge.
The driver is a proprietary design that features three active states:
Data High mode, Data Low mode, and Term mode, as well as
an Inhibit State. In conjunction with the integrated dynamic
clamp, this facilitates the implementation of a high speed active
termination. The output voltage range is –0.5 V to +6.5 V to
accommodate a wide variety of test devices.
The dual comparator, with an input range equal to the driver
output range, features PECL compatible outputs. Signal tracking
capability is in the range of 3 V/ns.
The active load can be set for up to 40 mA load current. IOH, IOL,
and the buffered VCOM are independently adjustable. On-board
Schottky diodes provide high speed switching and low capacitance.
Also included is an on-board temperature sensor that gives an
indication of the silicon surface temperature of the DCL. This
information can be used to measure JC and JA or flag an alarm
if proper cooling is lost. Output from the sensor is a current sink
FUNCTIONAL BLOCK DIAGRAM (One-Half)
VCC VCC VCC
VEE VEE VEE
DR_GND GND_ROT PWRGND HQGND THERMSTART
*ONLY 1 (ONE) THERM PER DEVICE
that is proportional to absolute temperature. The gain is trimmed
to a nominal value of 1.0 µA/K. As an example, the output current
can be sensed by using a 10 kΩ resistor connected from 10 V to
the THERM (IOUT) pin. A voltage drop across the resistor will
be developed that equals 10 kΩ ϫ 1 µA/°K = 10 mV/°K = 2.98 V
at room temperature.
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