ADL8105 Datasheet | Analog Devices

Features - Single positive supply (self biased) - Gain: 27 d B typical at 12 GHz to 17 GHz - OP1d B: 18 d B typical at 12 GHz to 17 GHz - OIP3: 30.5 d Bm typical at 12 to GHz to 17 GHz - Noise figure: 1.8 d B typical at 12 GHz to 17 GHz - Ro HS-pliant, 2 mm × 2 mm, 8-lead LFCSP APPLICATIONS - Telemunications - Satellite munications - Military radar - Weather radar - Electronic warfare - Instrumentation GENERAL DESCRIPTION The ADL8105 is a gallium arsenide (Ga As), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (p HEMT), low noise wideband amplifier that operates from 5 GHz to 20 GHz. The ADL8105 provides a typical gain of 27 d B at 12 GHz to 17 GHz, a 1.8 d B typical noise figure from 12 GHz to 17 GHz, a typical output third-order intercept (OIP3) of 30.5 d Bm at 12 GHz to 17 GHz, and a saturated output power (PSAT) of up to 20.5 d Bm, requiring only 90 m A from a 5 V supply voltage. The power FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram dissipation can be lowered at the expense of OIP3 and output power (POUT). The ADL8105 also Features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-coupled, and the bias inductor is also integrated, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. The ADL8105 is housed in an Ro HS-pliant, 2 mm × 2 mm, 8-lead LFCSP package. Rev. A DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Data Sheet TABLE OF...