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ADL8105 - MMIC

General Description

The ADL8105 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 5 GHz to 20 GHz.

Key Features

  • Single positive supply (self biased).
  • Gain: 27 dB typical at 12 GHz to 17 GHz.
  • OP1dB: 18 dB typical at 12 GHz to 17 GHz.
  • OIP3: 30.5 dBm typical at 12 to GHz to 17 GHz.
  • Noise figure: 1.8 dB typical at 12 GHz to 17 GHz.
  • RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet ADL8105 GaAs, pHEMT, MMIC, Low Noise Amplifier, 5 GHz to 20 GHz FEATURES ► Single positive supply (self biased) ► Gain: 27 dB typical at 12 GHz to 17 GHz ► OP1dB: 18 dB typical at 12 GHz to 17 GHz ► OIP3: 30.5 dBm typical at 12 to GHz to 17 GHz ► Noise figure: 1.8 dB typical at 12 GHz to 17 GHz ► RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP APPLICATIONS ► Telecommunications ► Satellite communications ► Military radar ► Weather radar ► Electronic warfare ► Instrumentation GENERAL DESCRIPTION The ADL8105 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 5 GHz to 20 GHz. The ADL8105 provides a typical gain of 27 dB at 12 GHz to 17 GHz, a 1.