Datasheet4U Logo Datasheet4U.com

ADMV7810 - 1W E-Band Power Amplifier

General Description

The ADMV7810 is an integrated E-band gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GHz.

Key Features

  • Gain: 20 dB typical Output power for 1 dB compression: 28 dBm typical Saturated output power: 29 dBm typical Output third-order intercept: 33 dBm typical Input return loss: 12 dB typical Output return loss: 20 dB typical DC supply: 4 V at 800 mA No external matching required Die size: 2.999 mm × 3.799 mm × 0.05 mm.

📥 Download Datasheet

Full PDF Text Transcription for ADMV7810 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ADMV7810. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet 81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7810 FEATURES Gain: 20 dB typical Output power for 1 dB compression: 28 dBm typical Satura...

View more extracted text
20 dB typical Output power for 1 dB compression: 28 dBm typical Saturated output power: 29 dBm typical Output third-order intercept: 33 dBm typical Input return loss: 12 dB typical Output return loss: 20 dB typical DC supply: 4 V at 800 mA No external matching required Die size: 2.999 mm × 3.799 mm × 0.