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ADPA7008 Datasheet Power Amplifier

Manufacturer: Analog Devices

Overview: Data Sheet ADPA7008 20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power.

General Description

The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature pensated on-chip power detector that operates from 20 GHz to 54 GHz.

The amplifier provides 17.5 dB of small signal gain, an output power for 1 dB pression (P1dB) of 30 dBm with an excellent IP3 of 37 dBm typical from 22 GHz to 40 GHz.

The ADPA7008 is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring 31 dBm of efficient PSAT.

Key Features

  • Output P1dB: 30 dBm typical at 22 GHz to 40 GHz.
  • PSAT: 31 dBm typical at 22 GHz to 40 GHz.
  • Gain: 17.5 dB typical at 22 GHz to 40 GHz.
  • Input return loss: 12 dB typical at 22 GHz to 40 GHz.
  • Output return loss: 9.5 dB typical at 22 GHz to 40 GHz.
  • Output IP3: 37 dBm typical at 22 GHz to 40 GHz.
  • Supply voltage: 5 V typical at 1500 mA.
  • 50 Ω matched input and output.
  • 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with heat sink [LCC_HS].
  • Integ.

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ADPA7008 Distributor