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ADPA7008 - Power Amplifier

Description

The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip power detector that operates fr

Features

  • Output P1dB: 30 dBm typical at 22 GHz to 40 GHz.
  • PSAT: 31 dBm typical at 22 GHz to 40 GHz.
  • Gain: 17.5 dB typical at 22 GHz to 40 GHz.
  • Input return loss: 12 dB typical at 22 GHz to 40 GHz.
  • Output return loss: 9.5 dB typical at 22 GHz to 40 GHz.
  • Output IP3: 37 dBm typical at 22 GHz to 40 GHz.
  • Supply voltage: 5 V typical at 1500 mA.
  • 50 Ω matched input and output.
  • 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with heat sink [LCC_HS].
  • Integ.

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Data Sheet ADPA7008 20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier FEATURES ► Output P1dB: 30 dBm typical at 22 GHz to 40 GHz ► PSAT: 31 dBm typical at 22 GHz to 40 GHz ► Gain: 17.5 dB typical at 22 GHz to 40 GHz ► Input return loss: 12 dB typical at 22 GHz to 40 GHz ► Output return loss: 9.
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