Description
The ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (PSAT, 1 W) distributed power amplifier with an integrated temperature compensated on-chip power detector that operates fr
Features
- Output P1dB: 30 dBm typical at 22 GHz to 40 GHz.
- PSAT: 31 dBm typical at 22 GHz to 40 GHz.
- Gain: 17.5 dB typical at 22 GHz to 40 GHz.
- Input return loss: 12 dB typical at 22 GHz to 40 GHz.
- Output return loss: 9.5 dB typical at 22 GHz to 40 GHz.
- Output IP3: 37 dBm typical at 22 GHz to 40 GHz.
- Supply voltage: 5 V typical at 1500 mA.
- 50 Ω matched input and output.
- 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with
heat sink [LCC_HS].
- Integ.
ADPA7008 Datasheet
