HMC637BPM5E Datasheet, Analog Devices

P1dB output power: 28 dBm typical Gain: 15.5 dB typical Output IP3: 39 dBm typical Self biased at VDD = 12 V at 345 mA typical Optional bias control on VGG1 for IDQ adjus.

Military and space Test instrumentation GENERAL DESCRIPTION The HMC637BPM5E is a gallium arsenide (GaAs), monolithic mic.

The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features opt.