BLV297 Description
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. - 2.0 1.8 0.1 10 1.2 Units V Ω V uA nA V http://.belling..cn -1Total 1 Pages 2/27/2008.
BLV297 is N-Channel Enhancement Mode Power MOSFET manufactured by BELLING.
| Part Number | Description |
|---|---|
| BLV1N60 | N-Channel Enhancement Mode Power MOSFET |
| BLV1N60A | N-Channel Enhancement Mode Power MOSFET |
| BLV40N20 | N-Channel Enhancement Mode Power MOSFET |
| BLV640 | N-Channel Enhancement Mode Power MOSFET |
| BLV6N60 | N-Channel Enhancement Mode Power MOSFET |
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. - 2.0 1.8 0.1 10 1.2 Units V Ω V uA nA V http://.belling..cn -1Total 1 Pages 2/27/2008.