Datasheet Details
| Part number | BLV297 |
|---|---|
| Manufacturer | BELLING |
| File Size | 79.75 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 BLV297 Datasheet
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| Part number | BLV297 |
|---|---|
| Manufacturer | BELLING |
| File Size | 79.75 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
BLV297 Datasheet
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This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency logic level circuit.
o Die size with scribe line Scribe line o Die Thickness o Metallization Top Bottom o Bonding Pad Size Gate Source o Passivation 1570µm X 1570µm 80um 300± 20um Al Ti / Ni / Ag 140µm X 102µm 540µm X 540µm Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS VSD Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward On Voltage VGS=0V, ID=250uA VGS=10V, ID=0.65A VDS=VGS, ID=400uA VDS=200V, VGS=0V VGS= 20V VGS=0V, IS=0.65A Min.
BLV297 N-channel Enhancement Mode Power MOSFET • Ease of Paralleling • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 200V 2.0Ω 0.
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