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BLV297 Datasheet - BELLING

N-Channel Enhancement Mode Power MOSFET

BLV297 General Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. o Die size with scribe line Scribe line o Die Thickness o Metallization Top Bottom o Bonding Pad Size Gate Source o Passivation 1570µm X 1570µm 80um 300± 20u.

BLV297 Datasheet (79.75 KB)

Preview of BLV297 PDF

Datasheet Details

Part number:

BLV297

Manufacturer:

BELLING

File Size:

79.75 KB

Description:

N-channel enhancement mode power mosfet.
BLV297 N-channel Enhancement Mode Power MOSFET Ease of Paralleling Fast Switching Simple Drive Requirements BVDSS RDS(.

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BLV297 N-Channel Enhancement Mode Power MOSFET BELLING

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