BCP120C Datasheet (BEREX) - HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCP120C - HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micron gate making this product ideally suited for applications where high-gain and medium power in the DC to 26.5 GHz frequency range are required.
The product may be used in either wideband (6-18 GHz) or narrow-band applications.
The BCP120C is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.

BCP120C Features

* 30.5 dBm Typical Output Power

* 11 dB Typical Gain @ 12 GHz

* 0.25 X 1200 Micron Recessed Gate APPLICATIONS

* Commercial

* Military / Hi-Rel.

* Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C PARAMETER/TEST CONDITIONS TES

BCP120C Datasheet - BEREX

BCP120C - HIGH EFFICIENCY HETEROJUNCTION POWER FET

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