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BNT02 - BroadBand AMP
BNT02 40-6000 MHz BroadBand AMP Device Features ā¢ Gain = 17.5 dB @ 3500MHz ā¢ OIP3 = 37.5 dBm @ 3500MHz ā¢ Output P1 dB = 19.6 dBm @ 3500 MHz ā¢ N.F = 1.BCP120C - HIGH EFFICIENCY HETEROJUNCTION POWER FET
BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25Āµm x 1200Āµm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr.BGS1 - SILICON GERMANIUM Gain Block
BGS1 50-4000 MHz SILICON GERMANIUM Gain Block Device Features ā¢ 3 ~ 3.2V supply ā¢ No Dropping Resistor Required ā¢ No matching circuit needed ā¢ Green/.BVA1762 - Ultra Flat Gain wideband DVGA
BVA1762 Ultra Flat Gain wideband DVGA with addressable function 500MHz - 8000MHz Device Features ā¢ Integrate DSA to AMP Functionality ā¢ 500-8000MHz.BG14B - Cascadable InGaP HBT Gain Block
BG14B 5-6000 MHz Cascadable InGaP HBT Gain Block Device Features ā¢ OIP3 = 35.0 dBm @ 1900 MHz ā¢ Gain = 16.0 dB @ 1900 MHz ā¢ Output P1 dB = 19.5 dBm @.BL083 - Wideband Low Nosie Amplifier
BL083 50-4000 MHz Wideband Low Nosie Amplifier Device Features ā¢ This can be operated at Vd of 3.0V ā¢ N.F = 0.78 dB @ 1850MHz at Demo board ā¢ 31.5 dB.BSW722T - Thin Package SPDT RF switch
Thin Package SPDT RF switch BSW722T 5MHz-6000MHz Product Description The BSW722T is a reflective SPDT RF switch that can be used in high power and g.BCF080T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 Āµm x 800 Āµm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 Āµm x 600 Āµm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.BGS2 - 50 - 4000-MHz SILICON GERMANIUM Gain Block
BGS2 50-4000 MHz SILICON GERMANIUM Gain Block Device Features ā¢ Single Fixed 3V supply ā¢ No Dropping Resistor Required ā¢ No matching circuit needed ā¢.BD2626 - Dual Band 2-Way SMT Power Divider
BD2626 Dual Band 2-Way SMT Power Divider 2400~2900MHz WCDMA, WiBro & LTE Device Features ļ· Typical Isolation = 25.0 dB ļ· Typical Insertion Loss = 0.6.BG11C - Cascadable InGaP HBT Gain Block
BG11C 50-4000 MHz Cascadable InGaP HBT Gain Block Device Features ā¢ OIP3 = 30.0 dBm @ 1900 MHz ā¢ Gain = 20.8 dB @ 1900 MHz ā¢ Output P1 = 17.3 dBm @19.BIG2 - Internally Matched IF Amplifier
Device Features ā¢ OIP3 = 41.0 dBm @ 140 MHz ā¢ Gain = 16.0 dB @ 140 MHz ā¢ Output P1 dB = 20.5 dBm @ 140 MHz ā¢ NF = 3.2 @ 140MHz at Demo Board ā¢ RoHS2-c.BT05CV - Wideband Drive Amplifier
BT05CV 5-4000 MHz Wideband Drive Amplifier Device Features ā¢ OIP3 = 43.5 dBm @ 900 MHz ā¢ Gain = 21.5 dB @ 900 MHz ā¢ Output P1 dB = 23.9 dBm @ 900 MHz.8TR8241 - 2.4GHz Bluetooth/BLE 4-Antenna Front End RFIC
Preliminary Datasheet 2.4GHz Bluetooth/BLEĀ® 4-Antenna Front End RFIC 8TR8241 2.4 - 2.5GHz Features ā¢ Single-Chip CMOS Front-End IC ā¢ 4-Port Antenna.BGM26 - Gain Block 2stage AMP
BGM26 1700-6000 MHz Gain Block 2stage AMP Device Features Part Marking ā¢ Gain = 31.0 dB @ 3500MHz ā¢ OIP3 = 30.0 dBm @ 3500MHz ā¢ Output P1 dB = 19.BCP020C-70 - HIGH EFFICIENCY HETEROJUNCTION POWER FET
BCP020C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25Āµm x 200Āµm gate) The BeRex BCP020C-70 is a GaAs Power pHEMT in an industry standard, 70 mil. .BVA2762 - High Gain Wideband DVGA
BVA2762 Ultra Flat, High Gain Wideband DVGA with addressable function 500MHz - 8000MHz Device Features ā¢ Integrate AMP1 + DSA + AMP2 Functionality ā¢.BVA2182 - DUAL DIGITAL VARIABLE GAIN AMPLIFIER
DUAL DIGITAL VARIABLE GAIN AMPLIFIER BVA2182 0.5GHz ā 3.8GHz Device Features ā¢ 48Pin 7 x 7 x 0.9mm QFN Package ā¢ Integrates Amp1(Gain Block), DSA1 .