BEREX Datasheet | Specifications & PDF Download

BCP020C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 200µm gate) The BeRex BCP020C-70 is a GaAs Power pHEMT in an industry standard, 70 mil.

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BCL015-70 SUPER LOW NOISE PHEMT (0.15µm x 150µm) The BeRex BCL015-70 is a GaAs Super Low Noise Enhancement Mode pHEMT in an industry standard, 70 mil

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BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BeRex 5-4000 MHz Cascadeable InGaP HBT Gain Block Device Features • 33 dBm Output IP3 at 5dBm/tone • 24.9 dB Gain at 900 MHz • 18 dBm P1dB • Highly Re

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BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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High Isolation Absorptive SPDT RF switch BSW6420 50MHz-6000MHz Product Description The BSW6420 is an absorptive SPDT 50Ω matched RF switch supportin

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BCL016B SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm) The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 mi

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BBA02 40-8000 MHz BroadBand AMP Device Features • Gain = 15.6 dB @ 2140MHz • OIP3 = 35.0 dBm @ 2140 MHz • Output P1 dB = 23.2 dBm @ 2140 MHz • N.F =

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High Linearity / Fast Switching SPDT RF switch BSW7321 5MHz-8000MHz Product Description The BSW7321 is a reflective SPDT RF switch that can be used

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BVA2140 0.7- 4GHz 1/4W Medium Power DIGITAL VARIABLE GAIN AMPLIFIER Device Features • Small 24-Pin 4 x 4 mm QFN Package • Integrate Amp1 to DSA and D

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BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr

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DUAL DIGITAL VARIABLE GAIN AMPLIFIER BVA2182 0.5GHz — 3.8GHz Device Features • 48Pin 7 x 7 x 0.9mm QFN Package • Integrates Amp1(Gain Block), DSA1

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Medium Power Digital Variable Gain Amplifier BVA3143 3300MHz – 3800MHz Product Description The BVA3143 is a digitally controlled variable gain ampli

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BCG004 4W GaN Power Transistor 4W GaN Power Transistor (0.15µm x 960µm gate) The BeRex BCG004 is a GaN Power HEMT die with a nominal 0.15 micron gate

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BCL016B-343 SUPER LOW NOISE PHEMT IN SOT-343 PACKAGE The BeRex BCL016B-343 is a GaAs super low noise pHEMT in a standard SOT-343 plastic package. It

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BG11C 50-4000 MHz Cascadable InGaP HBT Gain Block Device Features • OIP3 = 30.0 dBm @ 1900 MHz • Gain = 20.8 dB @ 1900 MHz • Output P1 = 17.3 dBm @19

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BGS1 50-4000 MHz SILICON GERMANIUM Gain Block Device Features • 3 ~ 3.2V supply • No Dropping Resistor Required • No matching circuit needed • Green/

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BVA2761 High Gain, High Linearity wideband DVGA with addressable function 50MHz - 6000MHz Device Features • Integrate AMP1 + DSA + AMP2 Functionalit

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BVA2762 Ultra Flat, High Gain Wideband DVGA with addressable function 500MHz - 8000MHz Device Features • Integrate AMP1 + DSA + AMP2 Functionality •

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BVA1762 Ultra Flat Gain wideband DVGA with addressable function 500MHz - 8000MHz Device Features • Integrate DSA to AMP Functionality • 500-8000MHz

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