BEREX Datasheet | Specifications & PDF Download

6-bit Digital Step Attenuator with Addressable Function BDA4630 1MHz – 6000MHz Device Features • 6-bit Serial & Parallel Interface • 31.5 dB Control

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BCP020C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 200µm gate) The BeRex BCP020C-70 is a GaAs Power pHEMT in an industry standard, 70 mil.

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BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BGS1 50-4000 MHz SILICON GERMANIUM Gain Block Device Features • 3 ~ 3.2V supply • No Dropping Resistor Required • No matching circuit needed • Green/

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BT302 500-4000 MHz 1W High Power Amplifier Device Features • +5V/215mA at operating bias condition • Gain = 16.0 dB @ 2400MHz • P1dB = 29.5 dBm @ 240

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BLB01 500 – 1500 MHz High Linearity LNA Device Features Part Marking (XX:Wafer number) • Internally matched to 50 ohms • Operated at 3.0V and 5.0V

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7-bit Digital Step Attenuator Device Features • 7-bit Serial & Parallel Interface • 31.75 dB Control Range 0.25 dB step • Glitch-safe attenuation stat

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BG12C 50-4000 MHz Cascadable InGaP HBT Gain Block Device Features • OIP3 = 35.0 dBm @ 900 MHz • Gain = 20.5 dB @ 900 MHz • Output P1 dB = 21.0 dBm @

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BLB04 2500 – 5000 MHz High Linearity LNA Device Features • Operated at 3.3V and 5.0V • 33.0dBm Output IP3 at 0dBm/tone at 3600MHz • 18.0dB Gain at 36

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BIF3 5-800 MHz Internally Matched IF Amplifier Device Features • OIP3 = 44.0 dBm @ 70 MHz • Gain = 20.3 dB @ 70 MHz • Output P1 dB = 23.5 dBm @ 70 MH

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BT331 700-4000 MHz 1.5~2.0W Power Amplifier Device Features • OIP3 = 51.0 dBm @ 1900 MHz • Gain = 14.0 dB @ 1900 MHz • Output P1 dB = 33.3 dBm @ 190

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BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BG12B 50-4000 MHz Cascadable InGaP HBT Gain Block Preliminary Datasheet Device Features  OIP3 = 36.5 dBm @ 900 MHz  Gain = 17.0 dB @ 900 MHz  Out

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High Isolation Absorptive SPDT RF switch BSW6420 50MHz-6000MHz Product Description The BSW6420 is an absorptive SPDT 50Ω matched RF switch supportin

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BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BCL016B SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm) The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 mi

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BNT02 40-6000 MHz BroadBand AMP Device Features • Gain = 17.5 dB @ 3500MHz • OIP3 = 37.5 dBm @ 3500MHz • Output P1 dB = 19.6 dBm @ 3500 MHz • N.F = 1

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BCL016B-343 SUPER LOW NOISE PHEMT IN SOT-343 PACKAGE The BeRex BCL016B-343 is a GaAs super low noise pHEMT in a standard SOT-343 plastic package. It

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6-bit Digital Step Attenuator BDA4620 1MHz – 6000MHz Device Features • 6-bit Serial & Parallel Interface • 31.5 dB Control Range 0.5 dB step • Glitc

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BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm) The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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