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BF9035SNZ-M - N-Channel MOSFET

General Description

The BF9035SNZ-M is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This is applied to electronic systems as a power switch.

Key Features

  • z VDS=30 V z ID=4A z Low on-state resistance RDS (on).

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Datasheet Details

Part number BF9035SNZ-M
Manufacturer BYD
File Size 184.16 KB
Description N-Channel MOSFET
Datasheet download datasheet BF9035SNZ-M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. BF9035SNZ-M 30V N-Channel MOSFET General Description The BF9035SNZ-M is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This is applied to electronic systems as a power switch. Features z VDS=30 V z ID=4A z Low on-state resistance RDS (on) <65mΩ (VGS=10V，ID=2.0A) RDS (on) < 80mΩ (VGS=4.5V，ID=2.0A) RDS (on) < 95mΩ (VGS=3.0V，ID=2.