BF912N60 Datasheet - BYD

N-Channel MOSFET

BF912N60 Features

* z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A) z Low CRSS (typical 17pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single PulseAvalanch

BF912N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.

BF912N60 Datasheet (255.92 KB)

BF912N60 Datasheet Preview — Preview of BF912N60 PDF

Datasheet Details

Part number:

BF912N60

Manufacturer:

BYD

File Size:

255.92 KB

Description:

N-channel mosfet.

📁 Related Datasheet

BF912N60L N-Channel MOSFET (BYD)

BF9100BSNL N-Channel MOSFET (BYD)

BF910N60 N-Channel MOSFET (BYD)

BF910N60L N-Channel MOSFET (BYD)

BF91404 N-Channel MOSFET (BYD)

BF900 Sicherungshalter (Inter Control)

BF900 n-channel dual gate MOSFET (Siliconix)

BF901 Silicon n-channel dual gate MOS-FETs (NXP)

BF901R Silicon n-channel dual gate MOS-FETs (NXP)

BF9024SPD-M P-Channel MOSFET and Schottky Diode (BYD)

TAGS

BF912N60 N-Channel MOSFET BYD

Image Gallery

BF912N60 Features

BF912N60 General Description

Datasheet Details

File Size:

Description:

BF912N60 Distributor