BF912N60 Datasheet, BYD

z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A) z Low CRSS (typical 17pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Volta.

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.