BF912N60L Datasheet N-Channel MOSFET

Manufacturer: BYD

Download the BF912N60L datasheet PDF. This datasheet also includes the BF912N60 variant, as both parts are published together in a single manufacturer document.

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BF912N60L n-channel mosfet by BYD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BF912N60-BYD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BF912N60L
Manufacturer	BYD
File Size	255.92 KB
Description	N-Channel MOSFET
Download	BF912N60L Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

BYD Microelectronics Co., Ltd.

BF912N60/ BF912N60L 600V N-Channel MOSFET.

Key Features

z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A) z Low CRSS (typical 17pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single PulseAvalancheEnergy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note.

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