Description
The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
Features
- z VDS (V) = 20V z ID = 3 A z Low on-state resistance
RDS (on) = 50mΩ TYP. (VGS = 4.5V) RDS (on) = 60mΩ TYP. (VGS = 2.5V)
BF92302N
20V N-Channel MOSFET
Absolute Maximum Ratings (Ta = 25℃)
Parameter N-MOSFET
Symbol Value
Unit
Drain to Source Voltage Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature
Storage Temperature
VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg
20 ±8 3 12 1.3 150 -55~+150
V V A A W ℃ ℃
Note: Mounted on FR4 Board of.
BF92302N-BYD.pdf
