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BF92302N Datasheet N-Channel MOSFET

Manufacturer: BYD

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Datasheet Details

Part number BF92302N
Manufacturer BYD
File Size 210.13 KB
Description N-Channel MOSFET
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General Description

The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for used as a load switch or in PWM applications.

Overview

BYD Microelectronics Co., Ltd.

General.

Key Features

  • z VDS (V) = 20V z ID = 3 A z Low on-state resistance RDS (on) = 50mΩ TYP. (VGS = 4.5V) RDS (on) = 60mΩ TYP. (VGS = 2.5V) BF92302N 20V N-Channel MOSFET Absolute Maximum Ratings (Ta = 25℃) Parameter N-MOSFET Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg 20 ±8 3 12 1.3 150 -55~+150 V V A A W ℃ ℃ Note: Mounted on FR4 Board of.

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