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BF92N7002 - N-Channel MOSFET

Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.

Features

  • z VDS =60 V z ID =300mA z RDS(ON) =2.8Ω TYP (VGS=10V) RDS(ON) =3.8Ω TYP (VGS=4.5V) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ VGS Gate-Source Voltage PD Power Dissipation (TC = 25°C) TJ,Tstg Operating junction and Storage Temperature Range Ordering Information Part Number BF92N7002 Package SOT-23 Value 60 300 ±20 350 -55 to +150 Unit V mA V mW ℃ Packagin.

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Datasheet Details

Part number BF92N7002
Manufacturer BYD
File Size 184.41 KB
Description N-Channel MOSFET
Datasheet download datasheet BF92N7002 Datasheet

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Full PDF Text Transcription

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BYD Microelectronics Co., Ltd. BF92N7002 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Features z VDS =60 V z ID =300mA z RDS(ON) =2.8Ω TYP (VGS=10V) RDS(ON) =3.8Ω TYP (VGS=4.
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