BF92N7002 Datasheet, BYD

z VDS =60 V z ID =300mA z RDS(ON) =2.8Ω TYP (VGS=10V) RDS(ON) =3.8Ω TYP (VGS=4.5V) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum .

It is also intended for any applications with low gate drive requirements. Features z VDS =60 V z ID =300mA z RDS(ON) .

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applicati.