BF92302N - N-Channel MOSFET

BYD

Datasheet Details

The BF92302N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

z VDS (V) = 20V z ID = 3 A z Low on-state resistance RDS (on) = 50mΩ TYP. (VGS = 4.5V) RDS (on) = 60mΩ TYP. (VGS = 2.5V) BF92302N 20V N-Channel MOSFET Absolute Maximum Ratings (Ta = 25℃) Parameter N-MOSFET Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg 20 ±8 3 12 1.3 150 -55~+150 V V A A W ℃ ℃ Note: Mounted on FR4 Board of.

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Published: Apr 12, 2017 |