BF92301P - P-Channel MOSFET

BYD

Datasheet Details

The BF92301P uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

z VDS (V) = -20V z ID = -2.8A z Low on-state resistance RDS (on) = 80mΩ TYP. (VGS = -4.5V) RDS (on) =100mΩ TYP. (VGS = -2.5V) BF92301P 20V P-Channel MOSFET Absolute Maximum Ratings (Ta = 25℃) Parameter P-MOSFET Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)a Maximun Power Dissipationa Channel Temperature Storage Temperature Symbol Value VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg -20 ±8 -2.8 -8 1.3 150 -55~+150 Unit V V A A W ℃ ℃ Note: Mounted on FR4.

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Published: Apr 12, 2017 |