BF92N60L Datasheet - BYD

BF92N60L N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.

BF92N60L Features

* z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Volta

BF92N60L Datasheet (275.98 KB)