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BF92N60 - N-Channel MOSFET

BYD

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Datasheet Details

Part number	BF92N60
Manufacturer	BYD
File Size	275.98 KB
Description	N-Channel MOSFET
Datasheet	BF92N60-BYD.pdf

BF92N60 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

Features

z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Voltage SinglePulseAvalanche Energy (Note2) Avalanche Current (Note1) RepetitiveAvalancheEnergy (Note1) PeakD.

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Published: Apr 12, 2017 |