BF92N60 N-Channel MOSFET

BYD

Description

BYD Microelectronics Co., Ltd.BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

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Datasheet Specifications

Part number: BF92N60
Manufacturer: BYD
File Size: 275.98 KB
Datasheet: BF92N60-BYD.pdf
Description: N-Channel MOSFET

Features

* z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL Drain-Source Voltage Drain Current(continuous)at Tc=25°C Drain Current (pulsed) (Note1) Gate-Source Volta

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BF92N60 N-Channel MOSFET BYD

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