BF8205T - Dual N-Channel MOSFET

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BYD Microelectronics

Part number	BF8205T
Manufacturer	BYD Microelectronics
File Size	209.57 KB
Description	Dual N-Channel MOSFET
Datasheet	BF8205T Datasheet
Additional preview pages of the BF8205T datasheet.

The BF8205T is a dual N-channel MOS Field Effect Transistor, Which is applied to electronic systems as a power switch.

.
VDS (V) =20V.
Low on-state resistance RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A) Absolute Maximum Ratings (Tc = 25℃) Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) a b Value 20 ±12 5 20 2 150 -55~+150 Unit V V A A W ℃ ℃ Total Power Dissipation Channel Temperature Storage Temperature Note a. PW.

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Published: Oct 28, 2014 |