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BYD Microelectronics

BF8205T Datasheet Preview

BF8205T Datasheet

Dual N-Channel MOSFET

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BYD Microelectronics Co., Ltd.
BF8205T
Dual N-Channel MOSFET
General Description
The BF8205T is a dual N-channel MOS Field Effect Transistor, Which
is applied to electronic systems as a power switch.
Features
VDS (V) =20V
Low on-state resistance
RDS(on) 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A)
RDS(on) 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A)
Absolute Maximum Ratings (Tc = 25)
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)a
Total Power Dissipationb
Channel Temperature
Storage Temperature
Value
20
±12
5
20
2
150
-55~+150
Unit
V
V
A
A
W
Note a. PW<10us, Duty Cycle<1%, VGS=4.5V.
b. Mounted on ceramic substrate of 45 cm2x 2.2mm.
Caution: These values must not be exceeded under any conditions.
Ordering Information
Part Number
BF8205T
Package
TSSOP8
Packaging
Tape & Reel
Datasheet
ES-BYD-WDZCE03D-069 Rev.A/1
Page 1 of 6




BYD Microelectronics

BF8205T Datasheet Preview

BF8205T Datasheet

Dual N-Channel MOSFET

No Preview Available !

BYD Microelectronics Co., Ltd.
BF8205T
Electrical Characteristics (TC = 25)
Symbol
Parameter
IDSS Zero Gate Voltage Drain Current
IGSS Gate Leakage Current
VGS(th)
Gate threshold voltage
|yfs| Forward Transfer Admittance
RDS(on)
Drain to Source On-state Resistance
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Test Conditions
VDS=18V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,ID= 0.25mA
VDS=10V,ID=3A
VGS=4.5V,ID=3A
VGS=2.5V,ID=3A
VDS=10V,
VGS=0V,
f=1MHz
VDD=10V,
ID=3A,
VGS=4.5V,
RG=4.7
VDD=16V,
VGS=4.5V,
ID=6A
IF=6A,VGS=0V
Typical characteristics (25unless noted)
Min.
0.5
Typ.
0.8
4
19
28
572
84.8
8
49.7
67
27.6
5.7
7.7
2.5
1.5
0.7
Max.
1
±10
1.5
22
32
Unit
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Figure 1 Threshold Voltage vs. Temperature
V t1h(.V2 )
1
V DS=V GS
ID=250uA
0.8
0.6
0.4
0.2
-50 0 50 100 150 Tj2(00)
Figure 2 VDSS vs.Temperature
V2D6SS
(V)
24
V GS=0
ID=250uA
22
20
18
16
-50 -10 30 70 110 Tj1(50)
Datasheet
ES-BYD-WDZCE03D-069 Rev.A/1
Page 2 of 6


Part Number BF8205T
Description Dual N-Channel MOSFET
Maker BYD Microelectronics
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