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BF820W - NPN high-voltage transistors

General Description

DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package.

1.

= p : made in Hong Kong.

= t : made in Malaysia.

= W : made in China.

Key Features

  • Low current (max. 50 mA).
  • High voltage (max. 300 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors NPN high-voltage transistor Product data sheet BF820W FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment. PINNING PIN 1 2 3 DESCRIPTION base emitter collector DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. handbook, halfpage 3 3 MARKING TYPE NUMBER BF820W MARKING CODE(1) 1V* Notes 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 1 1 Top view 2 MAM062 2 Fig.1 Simplified outline (SOT323) and symbol.