NXP Semiconductors BF820W
This document contains data from the objective specification for product development. This document contains data from the preliminary specification.| Part No. | BF820W |
|---|---|
| Datasheet | BF820W Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN high-voltage transistors |
| Buy | Stock & Price |
FEATURES
● Low current (max. 50 mA)● High voltage (max. 300 V).
APPLICATIONS
● Telephony and professional communication equipment. PINNING PIN 1 2 3DESCRIPTION
base emitter collectorDESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package. handbook, halfpage 3 3 MARKING TYPE NUMBER BF820W MARKING CODE(1) 1V* Notes 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. 1 1 Top view 2 MAM062 2 Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCEO ICM Ptot hFE Cre fT collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedback capacitance transition frequency CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 25 mA; VCE = 20 V IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz MIN. − − − − 50 − 60 MAX. 300 300 100 200 − 1.6 − UNIT V V mA mW pF MHz 2003 Sep 09 2 NXP Semiconductors NPN high-voltage transistor Product data sheet BF820W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
