Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET ge
M3D102
BF820W NPN high-voltage transistor
Product data sheet Supersedes data of 1997 Sep 03
2003 Sep 09
NXP Semiconductors
NPN high-voltage transistor
Product data sheet
Features
- Low current (max. 50 mA)
- High voltage (max. 300 V).
APPLICATIONS
- Telephony and professional munication equipment.
PINNING
PIN 1 2 3
DESCRIPTION base emitter collector
DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. handbook, halfpage
MARKING
TYPE NUMBER BF820W
MARKING CODE(1) 1V-
Notes
1.
- = p : made in Hong Kong.
- = t : made in Malaysia.
- = W : made in China.
1 Top view
MAM062
Fig.1 Simplified outline...
